Zirconium dioxide (ZrO2) films have been grown on Si(100) and Si(111) substrates at 800 °C by vacuum evaporation. A channeling spectrum of the Rutherford backscattering on the ZrO2films shows that ZrO2films [tetragonal (200)] are epitaxially grown on Si(100) substrate at 800 °C, which is consistent with x‐ray diffraction and reflection high‐energy electron diffraction observations. The spread of crystallite orientation in the epitaxial film is estimated to be 0.32°, by analyzing the angular dependence of the total backscattering yield.