Direct observation of stacking fault tetrahedra in ZnSe/GaAs(001) pseudomorphic epilayers by weak beam dark-field transmission electron microscopy
作者:
K. K. Fung,
N. Wang,
I. K. Sou,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 9
页码: 1225-1227
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119858
出版商: AIP
数据来源: AIP
摘要:
Using weak beam dark-field transmission electron microscopy, we have identified, by reference to stacking fault trapezoids, an additional crystal defect, a stacking fault tetrahedron, at the interface of ZnSe/GaAs(001) epilayers. Unlike the other stacking faults which are basically of uniform size, the size of stacking fault tetrahedra can vary by a few times, with a typical value of less than 10 nm. The stacking fault tetrahedron is a closed defect and does not extend very far from the interface. The density of the stacking fault tetrahedra is at least as high as that of the dominant stacking faults trapezoids. ©1997 American Institute of Physics.
点击下载:
PDF
(2150KB)
返 回