High quality ZnTe‐ZnSe strained‐layer superlattices grown on GaAs (001) substrates have been obtained by the hot wall epitaxy technique through introducing ZnTe and ZnSe buffers. Raman scattering from folded longitudinal acoustic phonons was observed. High‐angle satellite reflection peaks due to Cu K&agr;1 andK&agr;2 radiations were clearly resolved in the x‐ray diffraction patterns, and these patterns can be almost interpreted by a simple step model. The effect of the buffer layer on the strain of the superlattice is evaluated from the results of Raman scattering and x‐ray diffraction measurements.