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Nanolithography of chemically prepared Si with a scanning tunneling microscope

 

作者: S.‐T. Yau,   X. Zheng,   M. H. Nayfeh,  

 

期刊: Applied Physics Letters  (AIP Available online 1991)
卷期: Volume 59, issue 19  

页码: 2457-2459

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.105994

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Permanent nanometer structures were fabricated on chemically prepared Si by chemical activation of loosely bound hydrocarbon clusters triggered by voltage pulses across the tunneling gap of a scanning tunneling microscope. Current‐voltage measurements show that the fabrication process results in a local transition from a Schottky junction behavior to a MIS junction behavior, indicating the formation of topographic structures. Our experimental results indicate that the size and density of the clusters and the shape of the tunneling tip are important factors of the process. An example of parallel fabrication is presented.

 

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