Visible electroluminescence fromEu:CaF2layers grown by molecular beam epitaxy onp-Si (100)
作者:
T. Chatterjee,
P. J. McCann,
X. M. Fang,
J. Remington,
M. B. Johnson,
C. Michellon,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 25
页码: 3610-3612
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120456
出版商: AIP
数据来源: AIP
摘要:
Visible electroluminescence (EL) is observed at room temperature by current injection intoEu:CaF2layers containing 7.5 and 8.0 at. &percent; Eu grown by molecular beam epitaxy on lightly doped (100)p-type silicon. The EL spectra are broad with peaks near 700 and 600 nm, respectively. Room temperature photoluminescence spectra for the same samples exhibited peaks near 420 nm, with higher doped samples showing a more pronounced long wavelength tail. Although both metal and indium–tin–oxide (ITO) contacts were successfully used for current injection, the best EL intensity stability was achieved with contacts made of a 100 Å thick Al layer covered by a 2500 Å thick ITO layer. ©1997 American Institute of Physics.
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