Plastic deformation of InSb by uniaxial compression was found to produce decreases in both the electron mobility and magnetoresistance, but to have no effect on the Hall coefficient. Analyses of the temperature dependence of the conductivity mobility and the weak‐field magnetoresistance, in terms of mixed scattering by acoustic lattice vibrations and ionized impurities, suggest that the principal effect of this mode of deformation is the creation of ionized vacancies and interstitials in approximately equal densities. The analysis permits an estimate of the density of point defects, which can then be related to the total energy expended during deformation. Reference is made to the effects of plastic bending of InSb where the carrier concentration is affected. This behavior is similar to results on silicon and germanium which have been analyzed in terms of the Shockley‐Read trapping model.