The effect of thin film scaling on the capacitance versus voltage characteristic of a ferroelectric memory cell
作者:
J.W. Gregory,
J.D. Cuchiaro,
C.A. Araujo,
L.M. McMillan,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1995)
卷期:
Volume 6,
issue 1-4
页码: 281-288
ISSN:1058-4587
年代: 1995
DOI:10.1080/10584589508019371
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The effects on the capacitance versus voltage (CV) measurement from reducing the film thickness of Symetrix Y-1 ferroelectric material will be presented. The effects on the zero bias capacitance, coercive voltage and coercive electric field as a function of film thickness will also be presented. Obtained CV data was compared to data obtained from hysteresis measurements. The films were fabricated with a spin-on method and the thicknesses of the films were 1741, 2592, 3321, and 4050 Angstroms. The zero voltage capacitance showed a linear relationship as a function of film thickness and a change in the dielectric constant for films greater than 2500 Angstroms. A simple circuit model suggests the enhancement of the dielectric constant for the thin films may be caused by the space charge regions.
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