Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors
作者:
Y.‐F. Wu,
B. P. Keller,
S. Keller,
D. Kapolnek,
P. Kozodoy,
S. P. Denbaars,
U. K. Mishra,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 10
页码: 1438-1440
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117607
出版商: AIP
数据来源: AIP
摘要:
We report record high breakdown voltages up to 340 and 230 V realized on unintentionally doped (1.5 &mgr;m gate length) and Si doped (1 &mgr;m gate length) AlGaN/GaN modulation doped field effect transistors (MODFETs), respectively. The devices also have large transconductances up to 140 mS/mm and a full channel current of 150–400 mA/mm. The Si doped MODFET sample demonstrated a very high room temperature mobility of 1500 cm2/Vs. With these specifications, GaN field effect transistors as microwave power devices are practical. ©1996 American Institute of Physics.
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