Projection patterned Si doping of GaAs in ambient SiH4gas by a KrF excimer laser
作者:
Koji Sugioka,
Koichi Toyoda,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1988)
卷期:
Volume 6,
issue 6
页码: 1694-1697
ISSN:0734-211X
年代: 1988
DOI:10.1116/1.584163
出版商: American Vacuum Society
关键词: CRYSTAL DOPING;GALLIUM ARSENIDES;EFFICIENCY;LASER RADIATION;EXCIMER LASERS;SILANES;SPATIAL DISTRIBUTION;DOPING PROFILES;SILICON;LINE WIDTHS;GaAs
数据来源: AIP
摘要:
Potential application of a projection system with reduction optics to the patterned doping process has been demonstrated. A KrF excimer laser beam is projected on GaAs substrates enclosed in a SiH4gas ambient cell to achieve the Si doping with a field size of 5×5 mm2. At a laser fluence of 380 mJ/cm2, then‐type conduction layer with a surface carrier density of 2.27×1014cm−2in the semi‐insulating GaAs substrate and with an activation efficiency of ∼81% can be obtained. The minimum linewidth of 2.5 μm is discussed together with temperature profiles calculated by transient heat conduction in the substrate.
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