首页   按字顺浏览 期刊浏览 卷期浏览 Atomic geometry at the CoSi2/Si (111) interface
Atomic geometry at the CoSi2/Si (111) interface

 

作者: A. Santaniello,   P. DePadova,   X. Jin,   D. Chandesris,   G. Rossi,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1989）
卷期: Volume 7, issue 4  

页码: 1017-1021

 

ISSN:0734-211X

 

年代: 1989

 

DOI:10.1116/1.584793

 

出版商: American Vacuum Society

 

关键词: COBALT SILICIDES;SILICON;INTERFACES;SURFACE PROPERTIES;CRYSTAL STRUCTURE;ATOMS;CHEMICAL BONDS;GEOMETRY;CoS2;Si

 

数据来源: AIP

 

摘要:

We present a polarization‐dependent CoK‐edge SEXAFS investigation on the local atomic geometry around Co atoms at the interface between epitaxial CoSi2and Si(111). The Co interface atoms are found to be coordinated with eight Si atoms at CoSi2‐like bond lengths.

 

点击下载:  PDF (378KB)



返 回