Complex impedance measurements of capacitor structures on silicon with copper phthalocyanine dielectric
作者:
Rasoul Nowroozi‐Esfahani,
G. Jordan Maclay,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 7
页码: 3409-3418
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345353
出版商: AIP
数据来源: AIP
摘要:
Measurements were made of the capacitance and the conductance of several capacitor structures with a copper phthalocyanine (CuPc) dielectric at different voltages and in the frequency range of 102–106Hz. A thermally evaporated CuPc film about 1300 A˚ thick was fabricated in a parallel‐plate capacitor between gold and aluminum electrodes (Al‖CuPc‖Au). Two distributions of relaxation times are observed in this frequency range. At low frequencies voltage‐dependent polarization (possibly interfacial polarization) appears to be the dominant mechanism of current conduction. At high frequencies a relatively voltage‐independent hopping within and/or between molecules appears to be dominant. The CuPc remains polarized for a long time. Measurements were also made of the capacitance‐voltage (C‐V) characteristic of a Al‖CuPc‖SiO2‖Si capacitor at 104, 105, and 106Hz for different scanning rates. The basic features of the device’sC‐Vcharacteristics are discussed.
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