We have fabricated and tested lateral‐surface‐superlattice (LSSL) and quasi‐one‐dimensional (Q1D) devices on a modulation‐doped GaAs/GaAlAs heterostructure. The LSSL consists of a 0.2‐μm‐period (0.1‐μm nominal linewidth) Ti/Au grating or grid on top of the GaAlAs layer, forming a Schottky barrier which presents a tunable periodic potential modulation to the electrons traveling from source to drain. The grating gate was fabricated using x‐ray lithography to define the grating lines in poly(methylmethacrylate), and deep‐UV lithography to expose gate contact pads, followed by lift‐off of Ti/Au. Plots of the source–drain current as a function of the grating‐gate bias showed distinct plateaulike features at 4.2 K, providing evidence of a superlattice effect, that is, electron backdiffraction. Minor modifications of the fabrication process permitted Q1D and grid‐gate devices to be made. These also showed the expected structure in the conductance.