Thin copper films have been deposited by the room temperature reaction of gaseous copper (II) hexa-fluoroacetylacetonate [Cu(hfa)2] with hydrogen atoms produced in a remote discharge tube. The resulting films are conductive and adherent on a wide variety of substrates. Copper atoms have been observed and measured in the gas phase and were found by atomic absorption spectroscopy to have a maximum concentration of approximately 1011atoms/cc in the mixing/reaction zone. The reaction of Cu(hfa)2with oxygen atoms was also studied. The reaction again resulted in the deposition of a film and in addition a green chemiluminescent glow was observed which was identified as due to the gaseous diatomic CuF molecule. Copper atoms were also observed by absorption spectroscopy within this chemiluminescent reaction with oxygen atoms. The copper atom concentration was found to be approximately the same as that found with the H-atom reaction. The copper atom concentrations and the relative emission intensities of CuF were studied as a function of time and position to gain insight into the deposition process.