A supercollimated beam of 4 MeV H−ions with an angular spread of 1.5 × 10−3degrees, a diameter of 25 μ and a current of 10 picoamps was used to study the axial and planar channeling characteristics of single crystal silicon samples ranging in thickness from 0.5 to 1.0 μ. Since the angular spread of the beam is much smaller than most of the gross angular phenomena associated with channeling, it is possible to study the detailed characteristics of both planar and axial channeling with greater precision than before. Preliminary results indicate that this technique will allow a direct study of interatomic or continuum potential distributions and will also be useful for studying nuclear multiple scattering as a function of the tranverse energy of channeled particles relative to atomic rows and planar directions.