Low‐threshold interrupted‐growth step‐index separate‐confinement heterostructure GaAs/(Al,Ga)As lasers grown by molecular‐beam epitaxy
作者:
Martin Pion,
Alisa Specht,
Howard Appelman,
Richard Ebersohl,
David Begley,
Robert Waters,
Thomas Guido,
Susan Stazak,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 63,
issue 2
页码: 588-590
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.340096
出版商: AIP
数据来源: AIP
摘要:
We report preliminary results on the low‐threshold operation of interrupted‐growth GaAs/(Al,Ga)As step‐index separate‐confinement heterostructure lasers grown on misoriented substrates by molecular‐beam epitaxy. Growth was performed simultaneously on (100) substrates misoriented 1° and 6°, respectively, towards the nearest (111)Aface. The 6° orientation exhibited the better morphology and lowest threshold current density (260 A cm−2for a cavity length of 607 &mgr;m). The 1° orientation yielded the higher slope efficiency (0.43 W/A for a single facet). The growth was twice interrupted for 3 min each time for Al effusion cell temperature adjustment between the growth of the inner and outer cladding layers.
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