Numerical analysis of amorphous silicon solar cells: A detailed investigation of the effects of internal field distribution on cell characteristics
作者:
Tetsuro Ikegaki,
Haruo Itoh,
Sin’ichi Muramatsu,
Sunao Matsubara,
Nobuo Nakamura,
Toshikazu Shimada,
Jun’ichi Umeda,
Masanobu Migitaka,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 58,
issue 6
页码: 2352-2359
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335958
出版商: AIP
数据来源: AIP
摘要:
This paper describes the application of a new iterative method to numerical calculation of the performance of amorphous siliconp‐i‐nsolar cells. Using this method, the effects of gap‐state density, dopant impurities (B and P), and various cell parameters (diffusion length, interface recombination velocities, thickness of theilayer, etc.) on cell characteristics are investigated. The calculated results show that a strong electric field advantageously effects cell characteristics (especially through fill factor) in thei‐layer where many photocarriers are generated. However, a uniform field isn’t always adequate for high conversion efficiency. The improvement in conversion efficiency provided by boron doping is attributed to stretching of the diffusion length rather than rearrangement of the field distribution.
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