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Stimulated electron tunneling in metal‐barrier‐metal structures due to surface plasmons

 

作者: D. P. Siu,   R. K. Jain,   T. K. Gustafson,  

 

期刊: Applied Physics Letters  （AIP Available online 1976）
卷期: Volume 28, issue 7  

页码: 407-410

 

ISSN:0003-6951

 

年代: 1976

 

DOI:10.1063/1.88778

 

出版商: AIP

 

数据来源: AIP

 

摘要:

It is shown that electron tunneling can be stimulated by electron–plasmon–virtual photon interactions. Negative differential resistance exhibiting a threshold voltage and current density is expected for metal‐barrier‐metal structures.

 

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