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Photoluminescence and secondary‐ion mass spectrometry studies of rapid‐thermal‐annealed silicon coimplanted with phosphorus in GaAs

 

作者: G. Marrakchi,   A. Laugier,   G. Guillot,   S. Alaya,   H. Maaref,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 59, issue 8  

页码: 923-925

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.106302

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Coimplantation effects of phosphorus (P) are studied for Si‐implanted GaAs by photoluminescence and secondary‐ion mass spectrometry. P coimplantation decreases SiAsacceptor intensity. At high temperatures rapid thermal annealing causes As loss, which favors the formation of the SiAs‐VAscomplex. Diffusion of Si towards the GaAs bulk is not caused by P coimplantation but rather by the presence of carbon.

 

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