Bias effects in high performance GaAs homojunction far-infrared detectors
作者:
W. Z. Shen,
A. G. U. Perera,
H. C. Liu,
M. Buchanan,
W. J. Schaff,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 18
页码: 2677-2679
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120176
出版商: AIP
数据来源: AIP
摘要:
A high performance, bias tunable,p-GaAs homojunction interfacial workfunction internal photoemission far-infrared detector is demonstrated. A responsivity of3.10±0.05 A/W,a quantum efficiency of 12.5&percent;, and a detectivityD*of5.9×1010 cmHz/Wwere obtained at 4.2 K for cutoff wavelengths from 80 to 100 &mgr;m. The bias dependences of the quantum efficiency, detectivity, and cutoff wavelength were measured and are well explained by the theoretical model. The effect of the layer number on detector performance and the uniformity of the detectors are discussed. A comparison with Ge:Ga photoconductive detectors suggests that similar or even better performance may be obtainable with a far-infrared detector. ©1997 American Institute of Physics.
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