The temperature dependence of the Hall coefficient and resistivity is presented on samples which show an anomalous behavior and the effects of various surface treatments on the electrical properties is examined. The anomalous effects have been eliminated in a few cases by proper heat treatments yielding normalp‐type Hall coefficients down to 4.2°K. Field effect measurements confirm that these effects are due to ann‐type inversion layer on the surface ofp‐type Hg0.8Cd0.2Te. Surface carrier concentration in this inversion layer ranges from 1×1012/cm2to 5×1012/cm2and mobility in this layer was found to be in the 103cm2/V·sec range.