p‐type InSb crystals have been obtained by annealingn‐type InSb crystals at 350 °C in vacuum (10−5Torr) for different durations. The dc Hall effect and conductivity studies have shown that the inversion temperature increases with increase in annealing time, whereas the Hall mobility decreases. The ratio of electron to hole mobilitybis calculated from the logRH‐vs‐1/Tcurve and also from electron and hole concentrations. The ratiobis also calculated theoretically from electron and hole mobilities. The valuebobtained from experiments is found to differ from thebcalculated theoretically. This discrepancy has been attributed to the scattering of charge carriers by dislocations produced during annealing. Using the Dexter and Seitz mechanism [Phy. Rev. 86, 964 (1952)] the dislocation densities have been estimated in the annealed samples.