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Molecular beam epitaxial growth of CdTe, HgTe, and Hg1−xCdxTe alloys

 

作者: C. J. Summers,   E. L. Meeks,   N. W. Cox,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 2  

页码: 224-228

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582789

 

出版商: American Vacuum Society

 

关键词: molecular beam epitaxy;cadmium tellurides;mercury tellurides;vapor deposited coatings;gallium arsenides;indium phosphides

 

数据来源: AIP

 

摘要:

Preliminary results are presented of the growth of CdTe, HgTe and Hg1−xCdxTe layers withx‐values between 0.9 and 0.17 by molecular beam epitaxy (MBE). The growths were performed in a MBE system equipped with both binary (CdTe) and elemental Cd, Hg, and Te sources on (111) orientatedAfaced CdTe wafers. Growth of CdTe layers on (100) orientated GaAs and InP layers was also obtained.

 

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