Latest developments in the growth of CdxHg1−xTe and CdTe–HgTe superlattices by molecular beam epitaxy
作者:
J. P. Faurie,
A. Million,
R. Boch,
J. L. Tissot,
期刊:
Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films
(AIP Available online 1983)
卷期:
Volume 1,
issue 3
页码: 1593-1597
ISSN:0734-2101
年代: 1983
DOI:10.1116/1.572274
出版商: American Vacuum Society
关键词: molecular beam epitaxy;superlattices;n−type conductors;p−type conductors;carrier density;carrier mobility;substrates;layers;photovoltaic cells;high temperature;performance
数据来源: AIP
摘要:
We present here a general survey of our activity since 1981. We show thatn‐ orp‐type CdxHg1−xTe with low carrier concentration, high mobility and crystal perfection limited by the substrate itself can be grown by molecular beam epitaxy (MBE) between 180 and 210 °C onto CdTe(111) and (100) orientation. We report for the first time the characteristics of a photovoltaic device processed on ap‐type CdxHg1−xTe MBE layer which proves that this material can be grown by MBE with a detection device specification. We also give some information concerning 100 periods of 224 Å CdTe–HgTe superlattice previously reported.
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