3C‐SiCp‐njunction diodes are prepared on Si substrates by chemical vapor deposition growth with appropriate impurity doping, and their current‐voltage (I‐V) and capacitance‐voltage (C‐V) characteristics are studied.I‐Vcurves show good rectifying characteristics with a value of 3.3 for the ideal factornand a reverse leakage current less than 10 &mgr;A at −5 V. The junction area is approximately 0.8 mm2. The built‐in voltage is around 1.4 V byC‐Vmeasurements.