Inhomogeneous strain in individual quantum dots probed by transport measurements
作者:
C. D. Akyu¨z,
A. Zaslavsky,
L. B. Freund,
D. A. Syphers,
T. O. Sedgwick,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 14
页码: 1739-1741
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121169
出版商: AIP
数据来源: AIP
摘要:
Resonant tunneling measurements are used to probe the inhomogeneous strain in individual SiGe quantum dots. Current–voltage characteristics of strained Si/SiGe resonant tunneling diodes of diameterD⩽0.25 &mgr;mexhibit additional fine quasi-periodic structure in the resonant peaks. The fine structure is consistent with lateral quantization in the SiGe quantum well due to in-plane confining potentials arising from inhomogeneous strain, which we calculate by finite element techniques for variousD. Quenching of the fine structure by a magnetic field is consistent with the effective length scale of the strain-induced potential. ©1998 American Institute of Physics.
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