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Optical time‐of‐flight investigation of ambipolar carrier transport in GaAlAs using GaAs/GaAlAs double quantum well structures

 

作者: H. Hillmer,   G. Mayer,   A. Forchel,   K. S. Lo¨chner,   E. Bauser,  

 

期刊: Applied Physics Letters  （AIP Available online 1986）
卷期: Volume 49, issue 15  

页码: 948-950

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.97492

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We propose a new all‐optical time‐of‐flight method which provides transport properties like the average carrier velocity and diffusivity from measurements of the flight duration in semiconductor materials sandwiched between two quantum wells. The method is capable of very high spatial and temporal resolution and is demonstrated by time‐of‐flight experiments in GaAlAs.

 

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