It is proposed that the growth of quartz crystals into fused silica is effected by a mechanism involving the breaking of an Si‐O bond and its association with an OH group, followed by cooperative motion of the nonbridging oxygen and the hydroxyl group which results in the crystallization of a row of several molecules along a crystalline‐amorphous interfacial ledge. This mechanism explains, at least qualitatively, all the results of our earlier experimental study of the dependence of quartz crystal growth upon applied pressure: large negative activation volume; single activation enthalpy below Si‐O bond energy; growth velocity constant in time, proportional to the hydroxyl and chlorine content, decreasing with increasing degree of reduction, and enhanced by nonhydrostatic stresses; lower preexponential for the synthetic than for the natural silica.