Passivation of GaAs surfaces and AlGaAs/GaAs heterojunction bipolar transistors using sulfide solutions and SiNxoverlayer
作者:
A. Kapila,
V. Malhotra,
L. H. Camnitz,
K. L. Seaward,
D. Mars,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1995)
卷期:
Volume 13,
issue 1
页码: 10-14
ISSN:1071-1023
年代: 1995
DOI:10.1116/1.588001
出版商: American Vacuum Society
关键词: TERNARY COMPOUNDS;ALUMINIUM ARSENIDES;GALLIUM ARSENIDES;HETEROJUNCTIONS;BIPOLAR TRANSISTORS;PASSIVATION;SILICON NITRIDES;SULFIDES;CVD;CV CHARACTERISTIC;ANNEALING;GaAs;(Al,Ga)As;SiNx
数据来源: AIP
摘要:
Stable passivation of GaAs surfaces and AlGaAs/GaAs heterojunction bipolar transistors has been achieved using sulfide solutions and SiNxoverlayers. The SiNxlayers are deposited at ∼200 °C using electron cyclotron resonance plasma‐enhanced chemical vapor deposition technique. The capacitance–voltage measurements indicate a substantial reduction in the density of electronic defects at the SiNx/S–GaAs interface as a result of annealing in N2ambient. The base current of a 36×36 μm2AlGaAs/GaAs heterojunction bipolar transistor is reduced by approximately two orders of magnitude in the low collector current regime by using sulfide treatment, SiNxdeposition, and anneal. Both the Al/SiNx/S–GaAs capacitors and transistors are stable for several months with no noticeable degradation in their electrical characteristics.
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