Recombination mechanisms in type II (GaAs/AlAs) heterostructures
作者:
B. A. Wilson,
Carl E. Bonner,
R. C. Spitzer,
P. Dawson,
K. J. Moore,
C. T. Foxon,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1988)
卷期:
Volume 6,
issue 4
页码: 1156-1160
ISSN:0734-211X
年代: 1988
DOI:10.1116/1.584270
出版商: American Vacuum Society
关键词: RECOMBINATION;GALLIUM ARSENIDES;HETEROSTRUCTURES;ALUMINIUM ARSENIDES;PHOTOLUMINESCENCE;THICKNESS;GaAs;AlAs
数据来源: AIP
摘要:
Time‐resolved photoluminescence spectra and decay data are presented for a series of type II (GaAs/AlAs) samples with different GaAs layer thicknesses. Low‐temperature delayed spectra reveal that the spectral lines shift gradually to lower energy with delay, and that the shift extends to ms time scales. At 6 K the decay curves of the type II emission contain power‐law and exponential components with rates ∼103s−1, indicating significant Γ–Xmixing, both by random and nonrandom processes. Both rates increase with temperature. The dependence of the decay rates and spectra on the GaAs layer thickness is examined. Models of the recombination mechanisms are discussed in the context of these new results.
点击下载:
PDF
(537KB)
返 回