Macromolecular electronic device: Field‐effect transistor with a polythiophene thin film
作者:
A. Tsumura,
H. Koezuka,
T. Ando,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 49,
issue 18
页码: 1210-1212
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.97417
出版商: AIP
数据来源: AIP
摘要:
The first solid‐state field‐effect transistor has been fabricated utilizing a film of an organic macromolecule, polythiophene, as a semiconductor. The device characteristics have been optimized by controlling the doping levels of the polymer. The device is a normally off type and the source (drain) current can be modulated by a factor of 102–103by varying the gate voltage. The carrier mobility and the transconductance have also been determined to be ∼10−5cm2/V s and 3 nS, respectively, by means of electrical measurements.
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