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Macromolecular electronic device: Field‐effect transistor with a polythiophene thin film

 

作者: A. Tsumura,   H. Koezuka,   T. Ando,  

 

期刊: Applied Physics Letters  (AIP Available online 1986)
卷期: Volume 49, issue 18  

页码: 1210-1212

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.97417

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The first solid‐state field‐effect transistor has been fabricated utilizing a film of an organic macromolecule, polythiophene, as a semiconductor. The device characteristics have been optimized by controlling the doping levels of the polymer. The device is a normally off type and the source (drain) current can be modulated by a factor of 102–103by varying the gate voltage. The carrier mobility and the transconductance have also been determined to be ∼10−5cm2/V s and 3 nS, respectively, by means of electrical measurements.

 

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