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The design of GaAs/AlAs resonant tunneling diodes with peak current densities over 2×105A cm−2

 

作者: E. Wolak,   E. O¨zbay,   B. G. Park,   S. K. Diamond,   David M. Bloom,   James S. Harris,  

 

期刊: Journal of Applied Physics  （AIP Available online 1991）
卷期: Volume 69, issue 5  

页码: 3345-3350

 

ISSN:0021-8979

 

年代: 1991

 

DOI:10.1063/1.348563

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A coherent transport model is described which accommodates bandstructure nonparabolicity by using a ‘‘local energy parabolic band approximation.’’ The model and a knowledge of its limitations is used to design resonant tunneling diodes in the GaAs/AlAs material system with measured peak current densities of 2.5(2.8)×105A cm−2concurrent with peak‐to‐valley ratios as high as 1.8 (3.1) at room temperature (77 K).

 

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