Carrier wave inntype gallium arsenide under crossed d.c. electric and magnetic fields
作者:
N.Hashizume,
S.Kataoka,
期刊:
Proceedings of the Institution of Electrical Engineers
(IET Available online 1972)
卷期:
Volume 119,
issue 5
页码: 505-511
年代: 1972
DOI:10.1049/piee.1972.0109
出版商: IEE
数据来源: IET
摘要:
Assuming that current-density/electric-field curves are provided and that the Hall mobility does not change appreciably with the electric field, the small-signal tensor conductivity of n-GaAs in the presence of d.c. electric and magnetic fields is derived. Using this tensor conductivity, carrier-wave equations are solved for a long slab of n-GaAs sandwiched between dielectrics. It is found that wave vectors are generally skewed against the direction of the direct current. The gain factor of the propagation coefficient is found to be controllable by the magnetic field, especially when the slab is thin and the d.c. electric field is near the threshold value.
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