首页   按字顺浏览 期刊浏览 卷期浏览 Negative differential resistivity in ferroelectric thin-film current-voltage relationsh...
Negative differential resistivity in ferroelectric thin-film current-voltage relationships

 

作者: J.F. Scott,   B.M. Melnick,   J.D. Cuchiaro,   R. Zuleeg,   C.A. Araujo,   L.D. McMillan,   M.C. Scott,  

 

期刊: Integrated Ferroelectrics  (Taylor Available online 1994)
卷期: Volume 4, issue 1  

页码: 85-92

 

ISSN:1058-4587

 

年代: 1994

 

DOI:10.1080/10584589408018662

 

出版商: Taylor & Francis Group

 

关键词: PZT;leakage current;DRAMs;memories;dielectrics

 

数据来源: Taylor

 

摘要:

The current-voltage relationshipI(V) for several different ferroelectric thin films often exhibits an apparent negative differential resistivity. In the present paper we show that in lead zirconate-titanate (PZT) this is a spurious artifact arising from rapid (parametric) measurement techniques and that it disappears for d.c. measurements made with measuring times ≥300 s. However, in other ferroelectric materials (selected samples with unusually high trap densities) it appears to be a genuine effect characterized by anI= aV3current-voltage relationship at high current densities (≥100 nA/cm2),I(V) hysteresis above a “pseudo-breakdown voltage,” and distinctV2-to-V3cross-over threshold.

 

点击下载:  PDF (412KB)



返 回