Negative differential resistivity in ferroelectric thin-film current-voltage relationships
作者:
J.F. Scott,
B.M. Melnick,
J.D. Cuchiaro,
R. Zuleeg,
C.A. Araujo,
L.D. McMillan,
M.C. Scott,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1994)
卷期:
Volume 4,
issue 1
页码: 85-92
ISSN:1058-4587
年代: 1994
DOI:10.1080/10584589408018662
出版商: Taylor & Francis Group
关键词: PZT;leakage current;DRAMs;memories;dielectrics
数据来源: Taylor
摘要:
The current-voltage relationshipI(V) for several different ferroelectric thin films often exhibits an apparent negative differential resistivity. In the present paper we show that in lead zirconate-titanate (PZT) this is a spurious artifact arising from rapid (parametric) measurement techniques and that it disappears for d.c. measurements made with measuring times ≥300 s. However, in other ferroelectric materials (selected samples with unusually high trap densities) it appears to be a genuine effect characterized by anI= aV3current-voltage relationship at high current densities (≥100 nA/cm2),I(V) hysteresis above a “pseudo-breakdown voltage,” and distinctV2-to-V3cross-over threshold.
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