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Correction of calculated vacancy diffusion length at 1000°C in silicon

 

作者: Richard B. Fair,  

 

期刊: Journal of Applied Physics  (AIP Available online 1973)
卷期: Volume 44, issue 8  

页码: 3794-3795

 

ISSN:0021-8979

 

年代: 1973

 

DOI:10.1063/1.1662847

 

出版商: AIP

 

数据来源: AIP

 

摘要:

In attempting to calculate the anomalous transistor profiles published by Ziegler, Cole, and Baglin, it was necessary to assume the shape of the initial B profile. A complementary error function distribution was used, based upon their published junction depth and sheet resistance measurements. However, subsequent measurements of the initial B profile (unpublished results provided by Ziegler) showed that it did not have a complementary error function shape. In this paper, the calculations are repeated using the corrected initial B profile.

 

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