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Fabrication of atomically sharp tungsten tips

 

作者: T. S. Ravi,   R. B. Marcus,   T. Gmitter,   H. H. Busta,   J. T. Niccum,  

 

期刊: Applied Physics Letters  (AIP Available online 1990)
卷期: Volume 57, issue 14  

页码: 1413-1415

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.103451

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Atomically sharp tungsten tips (<20 A˚) have been grown on a silicon substrate by chemical vapor reaction of WF6with atomically sharp preformed silicon tips. Transmission electron microscope studies show that a thickness of about 50 A˚ of tungsten is optimum for complete coverage of silicon while retaining atomic sharpness at the tip. The tungsten is nearly amorphous and is porous. These tips have potential applications in vacuum microelectronics as electron emitters and can also be used as electronic and magnetic microsensors and probes.

 

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