Fabrication of atomically sharp tungsten tips
作者:
T. S. Ravi,
R. B. Marcus,
T. Gmitter,
H. H. Busta,
J. T. Niccum,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 14
页码: 1413-1415
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103451
出版商: AIP
数据来源: AIP
摘要:
Atomically sharp tungsten tips (<20 A˚) have been grown on a silicon substrate by chemical vapor reaction of WF6with atomically sharp preformed silicon tips. Transmission electron microscope studies show that a thickness of about 50 A˚ of tungsten is optimum for complete coverage of silicon while retaining atomic sharpness at the tip. The tungsten is nearly amorphous and is porous. These tips have potential applications in vacuum microelectronics as electron emitters and can also be used as electronic and magnetic microsensors and probes.
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