Functional graded high-K (Ba1−xSrx)TiO3thin films for capacitor structures with low temperature coefficient
作者:
R. Slowak,
S. Hoffmann,
R. Liedtke,
R. Waser,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 24,
issue 1-4
页码: 169-179
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908215589
出版商: Taylor & Francis Group
关键词: functional graded thin films;temperature coefficient;interdigital electrode configuration;thin film capacitor structures
数据来源: Taylor
摘要:
The high dielectric constant of perovskite-type alkaline earth titanates makes them attractive for use in integrated thin film capacitors for microwave circuits. The application temperatures of those devices such as resonators, filters and phase shifters range from cryogenic temperatures for superconducting devices up to 250°C for semiconducting ICs. Significant material modifications have to be introduced to bring the pure components such as BaTiO3and SrTiO3into formulations which have a suitable temperature coefficient of the dielectric constant. For conventional powder based industrial processes, usually solid solution adaptations and heterogeneous mixtures are employed.
点击下载:
PDF (676KB)
返 回