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Functional graded high-K (Ba1−xSrx)TiO3thin films for capacitor structures with low temperature coefficient

 

作者: R. Slowak,   S. Hoffmann,   R. Liedtke,   R. Waser,  

 

期刊: Integrated Ferroelectrics  (Taylor Available online 1999)
卷期: Volume 24, issue 1-4  

页码: 169-179

 

ISSN:1058-4587

 

年代: 1999

 

DOI:10.1080/10584589908215589

 

出版商: Taylor & Francis Group

 

关键词: functional graded thin films;temperature coefficient;interdigital electrode configuration;thin film capacitor structures

 

数据来源: Taylor

 

摘要:

The high dielectric constant of perovskite-type alkaline earth titanates makes them attractive for use in integrated thin film capacitors for microwave circuits. The application temperatures of those devices such as resonators, filters and phase shifters range from cryogenic temperatures for superconducting devices up to 250°C for semiconducting ICs. Significant material modifications have to be introduced to bring the pure components such as BaTiO3and SrTiO3into formulations which have a suitable temperature coefficient of the dielectric constant. For conventional powder based industrial processes, usually solid solution adaptations and heterogeneous mixtures are employed.

 

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