We have estimated the valence band discontinuity &Dgr;EVat thep‐ZnSe/p‐ZnTe interface by means of electrical measurements. From capacitance‐voltage measurement of a Schottky‐like barrier at the heterojunction, &Dgr;EV∼0.8 eV is found. The current‐voltage characteristics of the junctions, however, suggest smaller values for &Dgr;EV. The likely origin of this difference is leakage paths of the current in the barrier at the junction. ©1995 American Institute of Physics.