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Changes in electrical conductance of hydrogenated amorphous silicon deposited on optical waveguides in glass

 

作者: P. Danesh,   B. Pantchev,  

 

期刊: Applied Physics Letters  (AIP Available online 1997)
卷期: Volume 71, issue 4  

页码: 431-433

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119570

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A study of electrical conductance of hydrogenated amorphous silicon(a-Si:H) films deposited on optical waveguides in a soda-lime glass (SLG) substrate is carried out, from the viewpoint of electrical instability ofa-Si:H caused by the penetration of Na ions from the glass into the film. The optical waveguides were prepared byK+–Na+orAg+–Na+ion exchange using thermal or field-assisted methods. The effective thickness of optical waveguides was of several micrometers. The obtained results show that in the case ofa-Si:H film deposited on silver waveguide there is a dependence of electrical conductance on measurement duration, if strongly weakened as compared with film deposited on the original SLG substrate. Thea-Si:H films deposited on potassium waveguide and on Na-extracted surface are as stable, as the referent samples with Corning 7059 (Na-free) glass substrate. ©1997 American Institute of Physics.

 

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