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Determination of the carrier-type at III-nitride semiconductor surfaces/interfaces using contactless electroreflectance

 

作者: Wojciech Krystek,   Fred H. Pollak,   Z. C. Feng,   M. Schurman,   R. A. Stall,  

 

期刊: Applied Physics Letters  （AIP Available online 1998）
卷期: Volume 72, issue 11  

页码: 1353-1355

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.120991

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Using contactless electroreflectance at room temperature, we have nondestructively evaluated the band bending (carrier-type) at the surface of epitaxialn- andp-type GaN/sapphire samples as well as at both the InGaN surface and the InGaN/GaN interface of samples of epitaxial InGaN, having averagen- andp-type character, grown on top of thick GaN epilayers/sapphire. ©1998 American Institute of Physics.

 

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