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Buried reconstruction inhibition of solid phase epitaxy of Ge on Si (111)

 

作者: Olof Hellman,  

 

期刊: Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films  （AIP Available online 1994）
卷期: Volume 12, issue 5  

页码: 2825-2829

 

ISSN:0734-2101

 

年代: 1994

 

DOI:10.1116/1.578951

 

出版商: American Vacuum Society

 

关键词: GERMANIUM;SILICON;THIN FILMS;CRYSTALLIZATION;SOLID−PHASE EPITAXY;SURFACE RECONSTRUCTION;TEM;ULTRAHIGH VACUUM;Ge;Si

 

数据来源: AIP

 

摘要:

We study the epitaxial crystallization of a thin film of amorphous Ge deposited at room temperature on Si (111). Silicon surface features which are buried beneath the Ge film are seen to affect the rate of crystallization. In particular, solid phase growth is observed to be enhanced at surface steps and defects in the surface reconstruction. We demonstrate that control of Ge crystallization morphology is possible through manipulation of Si surface structure.

 

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