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Dislocation Etch Pits in Silicon Crystals

 

作者: F. L. Vogel,   L. Clarice Lovell,  

 

期刊: Journal of Applied Physics  （AIP Available online 1956）
卷期: Volume 27, issue 12  

页码: 1413-1415

 

ISSN:0021-8979

 

年代: 1956

 

DOI:10.1063/1.1722279

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A method for suitably etching dislocations in silicon crystals is reported. Using this etch, dislocations in various arrays were observed: low angle boundaries, slip lines, polygonization walls, and bent crystal distributions.

 

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