Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates
作者:
A. Konkar,
A. Madhukar,
P. Chen,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 2
页码: 220-222
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.120691
出版商: AIP
数据来源: AIP
摘要:
The lattice-mismatch stress-induced two-dimensional-to-three-dimensional morphology change is combined with interfacet adatom migration to selectively assemble parallel chains of InAs islands on top of [11¯0] oriented stripe mesas of sub-100-nm widths on GaAs(001) substrates. On such mesa stripes, preparedin situvia size-reducing epitaxy, deposition of InAs amounts subcritical for island formation on planar GaAs (001) is shown to allow self-assembly of three, two, and single chains of InAs three-dimensional island quantum dots selectively on the stripe mesa tops for widths decreasing from 100 nm down to 30 nm. ©1998 American Institute of Physics.
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