Regrowth behavior of ion‐implanted amorphous layers on 〈111〉 silicon
作者:
L. Csepregi,
J. W. Mayer,
T. W. Sigmon,
期刊:
Applied Physics Letters
(AIP Available online 1976)
卷期:
Volume 29,
issue 2
页码: 92-93
ISSN:0003-6951
年代: 1976
DOI:10.1063/1.88980
出版商: AIP
数据来源: AIP
摘要:
The regrowth of Si crystal from amorphous layers created by Si implantation into 〈111〉, 〈100〉, and 〈110〉 Si was studied. Channeling effect measurements show that the growths on the 〈110〉 and 〈100〉 substrates are epitaxial and linear with time. For the 〈111〉 samples the growth at 550 °C was significantly slower and nonlinear in time and the regrown layer contained a high concentration of defects. TEM micrographs indicate the presence of stacking faults and/or microtwins in the 〈111〉 samples.
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