Low‐current‐threshold room‐temperature injection GaAs‐AlxGa1−xAs multi‐quantum‐well (MQW) lasers have been prepared by molecular beam epitaxy. Under pulsed current injection, lasing emission attributed to then=1 electron‐to‐light‐hole (1e‐lh) confined‐particle transition was observed at threshold. Above threshold, lasing emission involving then=1 electron‐to‐heavy‐hole transition (1e−hh) became dominant. Single longitudinal mode operation has also been observed for these broad‐area MQW lasers. For heat‐sink temperatures between 8 and 100 °C, the lasing current thresholdIthfor the 1e−hhtransition has an exponential variation with temperature of the formIth∝ exp(T/T0), whereT0=230 °K.