Comparison of the annealing behavior of high-dosenitrogen-,aluminum-, and boron-implanted 4H–SiC
作者:
S. Seshadri,
G. W. Eldridge,
A. K. Agarwal,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 16
页码: 2026-2028
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121681
出版商: AIP
数据来源: AIP
摘要:
Room temperature free carrier concentrations exceeding1×1018 cm−1have been achieved with 1000 °C implants into 4H–SiC using N and Al (1×1017 cm−3using B). A decrease in resistivity is observed for annealing temperatures above∼1300,∼1500,and∼1750 °Cfor N, Al, and B, respectively. Rutherford backscattering spectroscopy measurements indicate almost complete recrystallization for N-implanted samples and partial recrystallization on the silicon, but not the carbon, sublattice for B- and Al-implanted samples. An implant and species related step formation is also observed. Only boron is observed to diffuse appreciably. A crystal stoichiometry and Fermi level dependent model is proposed to explain the activation results. ©1998 American Institute of Physics.
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