Growth ofb-axis rare earths on sapphire by molecular beam epitaxy
作者:
K. A. Ritley,
C. P. Flynn,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 2
页码: 170-172
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.120675
出版商: AIP
数据来源: AIP
摘要:
A process is described whereby hcp rare-earth metals can be grown heteroepitaxially as high-quality single-crystal films with thebaxis normal to the growth plane. The growth employs molecular beam epitaxy, starting from available sapphire substrates. The results of characterization by several techniques are described. ©1998 American Institute of Physics.
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