A new technique on the formation of TiN film with large grain size from TiNxis described. The TiNxlayer (defined in Sec. II A) was deposited by sputtering in argon and nitrogen. The nitrogen atoms in Ti matrix relaxed the mechanical stress of the deposited film and limited the surface mobility during the deposition process, resulting in a nanocrystalline structure with extremely uniform thickness. After rapid thermal annealing (RTA), the TiNxyielded a bilayer structure of TiN/TiSixOy, in which the TiN showed (111) preferred texture, extremely smooth surface, and large grain size without any columnar structure. In addition, the resistivity of the bilayered TiN was as low as 40 &mgr;&OHgr; cm. In the TiN multilayered aluminum structure (i.e., TiN/Al/TiN), epitaxial continuity and the intermetallic compound such as TiAl3were clearly observed at the aluminum/TiN interface. The multilayered structure showed better endurance against EM in comparison with the same structure using the conventional TiN (also defined in Sec. II A). ©1995 American Institute of Physics.