New vitreous semiconductors
作者:
A. Feltz,
W. Burckhardt,
L. Senf,
B. Ku¨nzel,
期刊:
AIP Conference Proceedings
(AIP Available online 1976)
卷期:
Volume 31,
issue 1
页码: 313-319
ISSN:0094-243X
年代: 1976
DOI:10.1063/1.30773
出版商: AIP
数据来源: AIP
摘要:
This paper describes the formation of chalcogenide glasses with high contents of heavy metals and some of their properties. In the systems HgSe‐GeSe‐GeSe2, HgTe‐GeSe‐GeSe2and HgTe‐GeTe‐GeSe2glasses up to 25 mole % Hg can be prepared on conventional cooling technique from the melt. HgSe‐GeSe melts yield also glasses are formed up to 22 mole % Pb. Ge‐Sn‐Se‐Te glasses were investigated in series substituting the homologous elements by each other. Conclusions on the structure are drawn from measurements of the density, thermal, optical and electric properties.
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