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New vitreous semiconductors

 

作者: A. Feltz,   W. Burckhardt,   L. Senf,   B. Ku¨nzel,  

 

期刊: AIP Conference Proceedings  (AIP Available online 1976)
卷期: Volume 31, issue 1  

页码: 313-319

 

ISSN:0094-243X

 

年代: 1976

 

DOI:10.1063/1.30773

 

出版商: AIP

 

数据来源: AIP

 

摘要:

This paper describes the formation of chalcogenide glasses with high contents of heavy metals and some of their properties. In the systems HgSe‐GeSe‐GeSe2, HgTe‐GeSe‐GeSe2and HgTe‐GeTe‐GeSe2glasses up to 25 mole % Hg can be prepared on conventional cooling technique from the melt. HgSe‐GeSe melts yield also glasses are formed up to 22 mole % Pb. Ge‐Sn‐Se‐Te glasses were investigated in series substituting the homologous elements by each other. Conclusions on the structure are drawn from measurements of the density, thermal, optical and electric properties.

 

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