Multicomponent structure in the temperature‐dependent persistent photoconductivity due to differentDXcenters in AlxGa1−xAs:Si
作者:
G. Brunthaler,
K. Ko¨hler,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 21
页码: 2225-2227
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.103898
出版商: AIP
数据来源: AIP
摘要:
The persistent photoconductivity of Si‐doped AlGaAs has been investigated by temperature‐dependent resistance and Hall effect measurements. After illuminating the samples at low temperature, we observe for the first time distinct structures in the temperature‐dependent carrier concentration during the subsequent heating process. These structures are interpreted in terms of the existence of differentDXlevels below the conduction‐band edge.
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