Comparison of damage and Si oxidation kinetics resulting from electron cyclotron resonance and distributed electron cyclotron resonance plasma processing
作者:
Y. Z. Hu,
M. Li,
Y. Wang,
E. A. Irene,
M. C. Hugon,
F. Varniere,
N. Jiang,
M. Froment,
B. Agius,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1995)
卷期:
Volume 13,
issue 2
页码: 227-234
ISSN:1071-1023
年代: 1995
DOI:10.1116/1.588356
出版商: American Vacuum Society
关键词: SILICON;OXIDATION;PLASMA SOURCES;ELECTRON CYCLOTRON−RESONANCE;DAMAGE;INTERFACE STRUCTURE;ELLIPSOMETRY;TEM;NUCLEAR REACTION ANALYSIS;Si
数据来源: AIP
摘要:
Interface damage and oxidation behavior are compared for electron cyclotron resonance plasma oxidation of silicon for two different plasma system configurations: a conventional system where the plasma is generated and extracted normal to the Si wafer surface, and another system where the plasma is made uniform by developing the magnetic field parallel to the substrate using permanent magnets outside the chamber and antennas inside, viz. distributed electron cyclotron resonance (DECR) plasma. Samples were compared using spectroscopic ellipsometry, nuclear reaction analysis, and transmission electron microscopy. Less damage was observed in the DECR plasma configuration, but otherwise the systems were comparable.
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